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A Low-Power Wideband D-Band LNA in a 130 nm BiCMOS Technology for Imaging Applications

Title data

Aguilar Mendoza, Erick ; Hagelauer, Amelie ; Kissinger, Dietmar ; Weigel, Robert:
A Low-Power Wideband D-Band LNA in a 130 nm BiCMOS Technology for Imaging Applications.
In: IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems : Proceedings. - Anaheim, USA , 2018 . - pp. 27-29
ISBN 978-1-5386-1298-9
DOI: https://doi.org/10.1109/SIRF.2018.8304220

Abstract in another language

A Low-power D-Band Low Noise Amplifier (LNA) manufactured in a recent 130 nm SiGe BiCMOS process for imaging applications is presented. The architecture consists of an optimized 3-stage cascode amplifier which achieves a maximum gain of 32.8 dB and a gain>20 dB in the frequency range from 121 to 161 GHz with a DC power consumption of 39.6 mW. The simulated noise figure varies from 6 to 9.7 dB within the range 130 to 140 GHz. To the best of the author’s knowledge, the presented work exhibits the highest gain-bandwidth product with the lowest power consumption for a D-Band amplifier in a 130 nm SiGe technology.

Further data

Item Type: Article in a book
Refereed: Yes
Keywords: D-Band; Imaging; Radiometrie; LNA; SiGe; mm-wave
Institutions of the University: Faculties > Faculty of Engineering Science > >
Result of work at the UBT: No
DDC Subjects: 600 Technology, medicine, applied sciences > 620 Engineering
Date Deposited: 16 Oct 2019 06:55
Last Modified: 16 Oct 2019 06:55
URI: https://eref.uni-bayreuth.de/id/eprint/52662