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LC Tank Differential Inductor-Coupled Dual-Core 60 GHz Push-Push VCO in 45 nm RF-SOI CMOS Technology

Title data

Rimmelspacher, Johannes ; Weigel, Robert ; Hagelauer, Amelie ; Issakov, Vadim:
LC Tank Differential Inductor-Coupled Dual-Core 60 GHz Push-Push VCO in 45 nm RF-SOI CMOS Technology.
In: 2019 IEEE 19th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF). - Piscataway, NJ : IEEE , 2019 . - pp. 325-327
ISBN 978-1-5386-5950-2
DOI: https://doi.org/10.1109/SIRF.2019.8709120

Abstract in another language

This paper presents a 60 GHz dual-core push-push VCO in a 45 nm partially depleted (PD) RF Silicon-on-Insulator (SOI) CMOS technology. The cores are coupled inductively via differential inductors. The best measured phase noise at 1 MHz offset from a 63 GHz carrier is −94.4 dBc/Hz. The wideband continuous frequency-tuning-range (FTR) is 16 . The DC power dissipation is 76 mW including fundamental 30 GHz and second harmonic (H2) 60 GHz output buffers at 1 V power supply voltage. The measurement results of a reference single-core VCO design proves the relative phase noise improvement of the implemented core-coupling technique. The chip area excluding pads is 0.09 mm<sup>2</sup>.

Further data

Item Type: Article in a book
Refereed: Yes
Keywords: millimeter-wave VCO; wideband; silicon-on-insulator; CMOS technology; System-on-Chip
Institutions of the University: Faculties > Faculty of Engineering Science > >
Result of work at the UBT: No
DDC Subjects: 600 Technology, medicine, applied sciences > 620 Engineering
Date Deposited: 18 Oct 2019 10:56
Last Modified: 18 Oct 2019 10:56
URI: https://eref.uni-bayreuth.de/id/eprint/52670