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A 60 GHz 30.5% PAE Differential Stacked PA with Second Harmonic Control in 45 nm PD-SOI CMOS

Title data

Ciocoveanu, Radu ; Weigel, Robert ; Hagelauer, Amelie ; Issakov, Vadim:
A 60 GHz 30.5% PAE Differential Stacked PA with Second Harmonic Control in 45 nm PD-SOI CMOS.
In: 2019 IEEE 19th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF). - Piscataway, NJ : IEEE , 2019 . - pp. 70-72
ISBN 978-1-5386-5950-2
DOI: https://doi.org/10.1109/SIRF.2019.8709143

Abstract in another language

This paper presents a 60GHz highly efficient single-stage differential stacked Class AB power amplifier (PA) with second harmonic control. The circuit has been realized in a 45 nm PD-SOI CMOS technology. Measurement results show that the power amplifier achieves a maximum output power (Pmax) of 15.3dBm with a competitive maximum power-added efficiency (PAEmax) of 30.5 at 60 GHz. The output-referred 1-dB compression point (OP1dB) is 9.5 dBm. Furthermore, the circuit draws 40mA from a 1.8V supply and the chip core size is 0.36mm x 0.35 mm.

Further data

Item Type: Article in a book
Refereed: Yes
Keywords: Power Amplifier; High-Power; High-Efficiency; PD-SOI
Institutions of the University: Faculties > Faculty of Engineering Science > >
Result of work at the UBT: No
DDC Subjects: 600 Technology, medicine, applied sciences > 620 Engineering
Date Deposited: 16 Oct 2019 12:51
Last Modified: 16 Oct 2019 12:51
URI: https://eref.uni-bayreuth.de/id/eprint/52697