Parasitic Turn-On of SiC MOSFETs – Turning a Bug into a Feature

Titelangaben

Hofstetter, Patrick ; Maier, Robert ; Bakran, Mark-M.:
Parasitic Turn-On of SiC MOSFETs – Turning a Bug into a Feature.
2020
Veranstaltung: PCIM Europe 2020 , 7.-8. Juli 2020 , Online.
(Veranstaltungsbeitrag: Kongress/Konferenz/Symposium/Tagung , Paper )

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Abstract

This paper shows, that the usually unwanted parasitic turn-on (PTO) in SiC MOSFETs does not alwaysneed to be of a disadvantage. It is shown that a small PTO can even be used to lower the maximumovervoltage at the body diode during the diode turn-off. In applications where this is the limiting condition forthe switching speed, this means that the SiC MOSFET turn-on can be accelerated leading to significantlylower losses.