Titlebar

Export bibliographic data
Literature by the same author
plus on the publication server
plus at Google Scholar

 

Parasitic Turn-On of SiC MOSFETs – Turning a Bug into a Feature

Title data

Hofstetter, Patrick ; Maier, Robert ; Bakran, Mark-M.:
Parasitic Turn-On of SiC MOSFETs – Turning a Bug into a Feature.
2020
Event: PCIM Europe 2020 , 7.-8. Juli 2020 , Online.
(Conference item: Conference , Paper )

Official URL: Volltext

Abstract in another language

This paper shows, that the usually unwanted parasitic turn-on (PTO) in SiC MOSFETs does not alwaysneed to be of a disadvantage. It is shown that a small PTO can even be used to lower the maximumovervoltage at the body diode during the diode turn-off. In applications where this is the limiting condition forthe switching speed, this means that the SiC MOSFET turn-on can be accelerated leading to significantlylower losses.

Further data

Item Type: Conference item (Paper)
Refereed: No
Institutions of the University: Faculties > Faculty of Engineering Science
Faculties > Faculty of Engineering Science > Chair Mechatronics
Faculties > Faculty of Engineering Science > Chair Mechatronics > Chair Mechatronics - Univ.-Prof. Dr.-Ing. Mark-M. Bakran
Profile Fields > Advanced Fields > Advanced Materials
Profile Fields > Emerging Fields > Energy Research and Energy Technology
Research Institutions > Affiliated Institutes > TechnologieAllianzOberfranken (TAO)
Faculties
Profile Fields
Profile Fields > Advanced Fields
Profile Fields > Emerging Fields
Research Institutions
Research Institutions > Affiliated Institutes
Result of work at the UBT: Yes
DDC Subjects: 600 Technology, medicine, applied sciences > 620 Engineering
Date Deposited: 03 Sep 2020 07:54
Last Modified: 07 Sep 2020 09:41
URI: https://eref.uni-bayreuth.de/id/eprint/56761