at Google ScholarTitle data
Hain, Stefan ; Bakran, Mark-M.:
New Ultra Fast Short Circuit Detection Method Without Using the Desaturation Process of the Power Semiconductor.
2016
Event: PCIM Europe 2016
, 10.-12. Mai 2016
, Nürnberg.
(Conference item: Conference
,
Speech
)
Abstract in another language
This paper presents an ultra fast short circuit detection method for hard switching faults and fault under load short circuit conditions without using the desaturation process of the power semiconductor. The detection method is based on monitoring the simultaneous behaviour of the di/dt and the gate voltage of the power semiconductor, which is significantly different under short circuit conditions. Furthermore, a comparison with different state-of-the-art short circuit detection methods is shown which allows a classification of the presented method in terms of detection time and detection current. Therefore, it will be presented that the new di/dt-gate short circuit detection method is able to detect a fault behaviour of the IGBT close to earliest possible point in time a short circuit failure could be detected at all.
Further data
| Item Type: | Conference item (Speech) |
|---|---|
| Refereed: | Yes |
| Institutions of the University: | Faculties > Faculty of Engineering Science > Chair Mechatronics > Chair Mechatronics - Univ.-Prof. Dr.-Ing. Mark-M. Bakran Profile Fields > Advanced Fields > Advanced Materials Profile Fields > Emerging Fields > Energy Research and Energy Technology Research Institutions > Research Units > ZET - Zentrum für Energietechnik Faculties Faculties > Faculty of Engineering Science Faculties > Faculty of Engineering Science > Chair Mechatronics Profile Fields Profile Fields > Advanced Fields Profile Fields > Emerging Fields Research Institutions Research Institutions > Research Units |
| Result of work at the UBT: | Yes |
| DDC Subjects: | 600 Technology, medicine, applied sciences > 620 Engineering |
| Date Deposited: | 20 May 2016 08:32 |
| Last Modified: | 09 Jan 2023 12:19 |
| URI: | https://eref.uni-bayreuth.de/id/eprint/32404 |