Explaining the short-circuit capability of SiC MOSFETs by using a simple thermal transmission-line model

Titelangaben

März, Andreas ; Bertelshofer, Teresa ; Horff, Roman ; Helsper, Martin ; Bakran, Mark-M.:
Explaining the short-circuit capability of SiC MOSFETs by using a simple thermal transmission-line model.
In: Institute of Electrical and Electronics Engineers (Hrsg.): Power Electronics and Applications (EPE'16 ECCE Europe), 2016 18th European Conference on. - Piscataway, New Jersey : IEEE Xplore , 2016 . - E-Book
DOI: https://doi.org/10.1109/EPE.2016.7695287

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Abstract

In this paper the short-circuit robustness of state of the art SiC MOSFETs is analysed and their short-circuit behaviour is compared to that of a modern IGBT. A simplified thermal model of the chip itself is used to explain the difference between the behaviour of IGBT and SiC MOSFET under short-circuit conditions. Further, this model is used to derive the requirements for short-circuit detection methods for SiC MOSFETs.