Title data
März, Andreas ; Bertelshofer, Teresa ; Horff, Roman ; Helsper, Martin ; Bakran, Mark-M.:
Explaining the short-circuit capability of SiC MOSFETs by using a simple thermal transmission-line model.
In:
Institute of Electrical and Electronics Engineers
(ed.):
Power Electronics and Applications (EPE'16 ECCE Europe), 2016 18th European Conference on. -
Piscataway, New Jersey
: IEEE Xplore
,
2016
. - E-Book
DOI: https://doi.org/10.1109/EPE.2016.7695287
Abstract in another language
In this paper the short-circuit robustness of state of the art SiC MOSFETs is analysed and their short-circuit behaviour is compared to that of a modern IGBT. A simplified thermal model of the chip itself is used to explain the difference between the behaviour of IGBT and SiC MOSFET under short-circuit conditions. Further, this model is used to derive the requirements for short-circuit detection methods for SiC MOSFETs.
Further data
Item Type: | Article in a book |
---|---|
Refereed: | Yes |
Institutions of the University: | Faculties > Faculty of Engineering Science > Chair Mechatronics > Chair Mechatronics - Univ.-Prof. Dr.-Ing. Mark-M. Bakran Profile Fields > Advanced Fields > Advanced Materials Profile Fields > Emerging Fields > Energy Research and Energy Technology Research Institutions > Research Units > ZET - Zentrum für Energietechnik Faculties Faculties > Faculty of Engineering Science Faculties > Faculty of Engineering Science > Chair Mechatronics Profile Fields Profile Fields > Advanced Fields Profile Fields > Emerging Fields Research Institutions Research Institutions > Research Units |
Result of work at the UBT: | Yes |
DDC Subjects: | 600 Technology, medicine, applied sciences > 620 Engineering |
Date Deposited: | 14 Nov 2016 08:41 |
Last Modified: | 09 Jan 2023 12:42 |
URI: | https://eref.uni-bayreuth.de/id/eprint/35111 |