Explaining the short-circuit capability of SiC MOSFETs by using a simple thermal transmission-line model

Title data

März, Andreas ; Bertelshofer, Teresa ; Horff, Roman ; Helsper, Martin ; Bakran, Mark-M.:
Explaining the short-circuit capability of SiC MOSFETs by using a simple thermal transmission-line model.
In: Institute of Electrical and Electronics Engineers (ed.): Power Electronics and Applications (EPE'16 ECCE Europe), 2016 18th European Conference on. - Piscataway, New Jersey : IEEE Xplore , 2016 . - E-Book
DOI: https://doi.org/10.1109/EPE.2016.7695287

Official URL:

Abstract in another language

In this paper the short-circuit robustness of state of the art SiC MOSFETs is analysed and their short-circuit behaviour is compared to that of a modern IGBT. A simplified thermal model of the chip itself is used to explain the difference between the behaviour of IGBT and SiC MOSFET under short-circuit conditions. Further, this model is used to derive the requirements for short-circuit detection methods for SiC MOSFETs.

Further data

Item Type:	Article in a book
Refereed:	Yes
Institutions of the University:	Faculties > Faculty of Engineering Science > Chair Mechatronics > Chair Mechatronics - Univ.-Prof. Dr.-Ing. Mark-M. Bakran Profile Fields > Advanced Fields > Advanced Materials Profile Fields > Emerging Fields > Energy Research and Energy Technology Research Institutions > Research Units > ZET - Zentrum für Energietechnik Faculties Faculties > Faculty of Engineering Science Faculties > Faculty of Engineering Science > Chair Mechatronics Profile Fields Profile Fields > Advanced Fields Profile Fields > Emerging Fields Research Institutions Research Institutions > Research Units
Result of work at the UBT:	Yes
DDC Subjects:	600 Technology, medicine, applied sciences > 620 Engineering
Date Deposited:	14 Nov 2016 08:41
Last Modified:	09 Jan 2023 12:42
URI:	https://eref.uni-bayreuth.de/id/eprint/35111