at Google ScholarTitle data
Maier, Robert ; Bakran, Mark-M.:
Switching SiC MOSFETs under conditions of a high power module.
2018
Event: EPE 2018 : 20th European Conference on Power Electronics and Applications
, 17.09.-21.09.2018
, Riga, Lettland.
(Conference item: Conference
,
Paper
)
Abstract in another language
This paper discusses the investigation of SiC MOSFET switching characteristic in high inductive environment.
The characteristic product of stray-inductance times nominal current grows with the power
rating and is a limiting factor for the speed of current commutation. The reduction of switching speed
due to this limit and its impact on switching performance is evaluated. Furthermore this paper proposes
a, according to the author’s knowledge, novel benchmark for characterisation and comparison of SiC
MOSFET switching behaviour.
Further data
| Item Type: | Conference item (Paper) |
|---|---|
| Refereed: | Yes |
| Institutions of the University: | Faculties > Faculty of Engineering Science > Chair Mechatronics > Chair Mechatronics - Univ.-Prof. Dr.-Ing. Mark-M. Bakran Profile Fields > Advanced Fields > Advanced Materials Profile Fields > Emerging Fields > Energy Research and Energy Technology Research Institutions > Research Units > ZET - Zentrum für Energietechnik Faculties Faculties > Faculty of Engineering Science Faculties > Faculty of Engineering Science > Chair Mechatronics Profile Fields Profile Fields > Advanced Fields Profile Fields > Emerging Fields Research Institutions Research Institutions > Research Units |
| Result of work at the UBT: | Yes |
| DDC Subjects: | 600 Technology, medicine, applied sciences > 620 Engineering |
| Date Deposited: | 13 Nov 2018 09:17 |
| Last Modified: | 13 Nov 2018 09:17 |
| URI: | https://eref.uni-bayreuth.de/id/eprint/46300 |