at Google ScholarTitle data
Kestler, Tobias ; Bakran, Mark-M.:
Junction Temperature Measurement of SiC MOSFETs : Straightforward as it seems?
2018
Event: PCIM Europe 2018
, 05.06.-07.06.2018
, Nürnberg, Deutschland.
(Conference item: Conference
,
Paper
)
Abstract in another language
Reliable measurement of the junction temperature
Tj is essential for the application of power semiconductors.
Similar to the IGBT’s Vce-method, for SiC
MOSFETs the voltage drop over the body diode can
be used for Tj acquisition. This method is validated
for different devices with consideration of the gate
voltage’s and measuring current’s influence. Furthermore,
the applicability of the Rgi-method, which
also works in switching operation and utilizes the
temperature coefficient of the internal gate resistance,
is evaluated for SiC MOSFETS.
Further data
| Item Type: | Conference item (Paper) |
|---|---|
| Refereed: | Yes |
| Institutions of the University: | Faculties > Faculty of Engineering Science > Chair Mechatronics > Chair Mechatronics - Univ.-Prof. Dr.-Ing. Mark-M. Bakran Profile Fields > Advanced Fields > Advanced Materials Profile Fields > Emerging Fields > Energy Research and Energy Technology Research Institutions > Research Units > ZET - Zentrum für Energietechnik Faculties Faculties > Faculty of Engineering Science Faculties > Faculty of Engineering Science > Chair Mechatronics Profile Fields Profile Fields > Advanced Fields Profile Fields > Emerging Fields Research Institutions Research Institutions > Research Units |
| Result of work at the UBT: | Yes |
| DDC Subjects: | 600 Technology, medicine, applied sciences > 620 Engineering |
| Date Deposited: | 13 Nov 2018 10:00 |
| Last Modified: | 13 Nov 2018 10:00 |
| URI: | https://eref.uni-bayreuth.de/id/eprint/46308 |