Oxygen partial pressure dependency of the electrical conductivity of aerosol deposited alumina films between 650 °C and 900 °C

Title data

Schubert, Michael ; Leupold, Nico ; Kita, Jaroslaw ; Moos, Ralf:
Oxygen partial pressure dependency of the electrical conductivity of aerosol deposited alumina films between 650 °C and 900 °C.
In: Materials Letters. Vol. 245 (2019) . - pp. 208-210.
ISSN 0167-577X
DOI: https://doi.org/10.1016/j.matlet.2019.02.094

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Abstract in another language

The dependence of the electrical conductivity on the oxygen partial pressure of alumina films produced by the Aerosol Deposition Method (ADM) was investigated. The samples were contacted in a three-electrode setup according to DIN IEC 60093:1993-12 for high insulating materials and the conductivity was measured as a function of the oxygen partial pressure between 650 °C and 900 °C. The conductivity increases with the oxygen partial pressure and thus shows p-type behavior. Constant final values are reached even at these low temperatures. In the double logarithmic representation, a slope of approx. 3/16 can be determined. Following a defect chemical approach for M2O3 (M represents a metal) and the assumption of Schottky disorder, a defect chemical model can be established.