at Google ScholarTitle data
Hofstetter, Patrick ; Bakran, Mark-M.:
Challenging the 2D-Short Circuit Detection Method for SiC MOSFETs.
2019
Event: PCIM Europe 2019
, 07.05.-09.05.2019
, Nürnberg.
(Conference item: Conference
,
Paper
)
Abstract in another language
After proving the potential of the 2D-short circuit detection method for SiC MOSFETs in the preceding work [1], this paper aims to test worst case application conditions and to further develop the protection system. Besides investigations on temperature influences and low inductive setups, it is shown how to cope with oscillations on the drain current with different circuit extensions. These may even occur during conductive state, due to the switching of adjacent phases.
Further data
| Item Type: | Conference item (Paper) |
|---|---|
| Refereed: | Yes |
| Institutions of the University: | Faculties > Faculty of Engineering Science > Chair Mechatronics > Chair Mechatronics - Univ.-Prof. Dr.-Ing. Mark-M. Bakran Profile Fields > Advanced Fields > Advanced Materials Profile Fields > Emerging Fields > Energy Research and Energy Technology Research Institutions > Research Units > ZET - Zentrum für Energietechnik Faculties Faculties > Faculty of Engineering Science Faculties > Faculty of Engineering Science > Chair Mechatronics Profile Fields Profile Fields > Advanced Fields Profile Fields > Emerging Fields Research Institutions Research Institutions > Research Units |
| Result of work at the UBT: | Yes |
| DDC Subjects: | 600 Technology, medicine, applied sciences > 620 Engineering |
| Date Deposited: | 13 Jun 2019 07:38 |
| Last Modified: | 13 Jun 2019 07:38 |
| URI: | https://eref.uni-bayreuth.de/id/eprint/49489 |