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Nanocrystal formation in SiC by Ge ion implantation and subsequent thermal annealing

Title data

Schubert, Christian ; Kaiser, Ute ; Hedler, A. ; Wesch, Werner ; Gorelik, Tatiana ; Glatzel, Uwe ; Kräußlich, J. ; Wunderlich, B. ; Hess, G. ; Goetz, K.:
Nanocrystal formation in SiC by Ge ion implantation and subsequent thermal annealing.
In: Journal of Applied Physics. Vol. 91 (2002) Issue 3 . - pp. 1520-1524.
ISSN 1089-7550
DOI: https://doi.org/10.1063/1.1430539

Further data

Item Type: Article in a journal
Refereed: Yes
Institutions of the University: Faculties
Faculties > Faculty of Engineering Science
Faculties > Faculty of Engineering Science > Chair Metals and Alloys
Faculties > Faculty of Engineering Science > Chair Metals and Alloys > Chair Metals and Alloys - Univ.-Prof. Dr.-Ing. Uwe Glatzel
Profile Fields
Profile Fields > Advanced Fields
Profile Fields > Advanced Fields > Advanced Materials
Research Institutions
Research Institutions > Research Centres
Research Institutions > Research Centres > Bayreuth Center for Material Science and Engineering - BayMAT
Result of work at the UBT: No
DDC Subjects: 600 Technology, medicine, applied sciences
600 Technology, medicine, applied sciences > 620 Engineering
Date Deposited: 09 Oct 2015 10:16
Last Modified: 09 Oct 2015 10:16
URI: https://eref.uni-bayreuth.de/id/eprint/5202