at Google ScholarTitle data
Aguilar Mendoza, Erick ; Hagelauer, Amelie ; Kissinger, Dietmar ; Weigel, Robert:
A Low-Power Wideband D-Band LNA in a 130 nm BiCMOS Technology for Imaging Applications.
In:
IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems : Proceedings. -
Anaheim, USA
,
2018
. - pp. 27-29
ISBN 978-1-5386-1298-9
DOI: https://doi.org/10.1109/SIRF.2018.8304220
Abstract in another language
A Low-power D-Band Low Noise Amplifier (LNA) manufactured in a recent 130 nm SiGe BiCMOS process for imaging applications is presented. The architecture consists of an optimized 3-stage cascode amplifier which achieves a maximum gain of 32.8 dB and a gain>20 dB in the frequency range from 121 to 161 GHz with a DC power consumption of 39.6 mW. The simulated noise figure varies from 6 to 9.7 dB within the range 130 to 140 GHz. To the best of the author’s knowledge, the presented work exhibits the highest gain-bandwidth product with the lowest power consumption for a D-Band amplifier in a 130 nm SiGe technology.
Further data
| Item Type: | Article in a book |
|---|---|
| Refereed: | Yes |
| Keywords: | D-Band; Imaging; Radiometrie; LNA; SiGe; mm-wave |
| Institutions of the University: | Faculties > Faculty of Engineering Science > Former Professors > Chair Communication Electronics - Univ.-Prof. Dr.-Ing. Amélie Marietta Hagelauer Faculties Faculties > Faculty of Engineering Science Faculties > Faculty of Engineering Science > Chair Communication Electronics Faculties > Faculty of Engineering Science > Former Professors |
| Result of work at the UBT: | No |
| DDC Subjects: | 600 Technology, medicine, applied sciences > 620 Engineering |
| Date Deposited: | 16 Oct 2019 06:55 |
| Last Modified: | 16 Jul 2020 12:53 |
| URI: | https://eref.uni-bayreuth.de/id/eprint/52662 |