at Google ScholarTitle data
Ciocoveanu, Radu ; Weigel, Robert ; Hagelauer, Amelie ; Issakov, Vadim:
A 60 GHz 30.5% PAE Differential Stacked PA with Second Harmonic Control in 45 nm PD-SOI CMOS.
In:
2019 IEEE 19th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF). -
Piscataway, NJ
: IEEE
,
2019
. - pp. 70-72
ISBN 978-1-5386-5950-2
DOI: https://doi.org/10.1109/SIRF.2019.8709143
Abstract in another language
This paper presents a 60GHz highly efficient single-stage differential stacked Class AB power amplifier (PA) with second harmonic control. The circuit has been realized in a 45 nm PD-SOI CMOS technology. Measurement results show that the power amplifier achieves a maximum output power (Pmax) of 15.3dBm with a competitive maximum power-added efficiency (PAEmax) of 30.5 at 60 GHz. The output-referred 1-dB compression point (OP1dB) is 9.5 dBm. Furthermore, the circuit draws 40mA from a 1.8V supply and the chip core size is 0.36mm x 0.35 mm.
Further data
| Item Type: | Article in a book |
|---|---|
| Refereed: | Yes |
| Keywords: | Power Amplifier; High-Power; High-Efficiency; PD-SOI |
| Institutions of the University: | Faculties > Faculty of Engineering Science > Former Professors > Chair Communication Electronics - Univ.-Prof. Dr.-Ing. Amélie Marietta Hagelauer Faculties Faculties > Faculty of Engineering Science Faculties > Faculty of Engineering Science > Chair Communication Electronics Faculties > Faculty of Engineering Science > Former Professors |
| Result of work at the UBT: | No |
| DDC Subjects: | 600 Technology, medicine, applied sciences > 620 Engineering |
| Date Deposited: | 16 Oct 2019 12:51 |
| Last Modified: | 16 Oct 2019 12:51 |
| URI: | https://eref.uni-bayreuth.de/id/eprint/52697 |