at Google ScholarTitle data
Hofstetter, Patrick ; Bakran, Mark-M.:
Mitigating Drain Source Voltage Oscillation for SiC Power MOSFETs in order to reduce Electromagnetic Interference.
2019
Event: 21th European Conference on Power Electronics and Applications
, 02.09.-06.09.2019
, Genua, Italien.
(Conference item: Conference
,
Paper
)
Abstract in another language
In this paper various approaches are shown to mitigate drain source voltage oscillation at SiC MOSFET turn-off. At first, a MOSFET behavior model is presented and confirmed with measurement results.
Based on this model, the suitability of oscillation mitigation methods is evaluated regarding effect, timing requirement and switching losses.
Further data
| Item Type: | Conference item (Paper) |
|---|---|
| Refereed: | Yes |
| Institutions of the University: | Faculties > Faculty of Engineering Science > Chair Mechatronics > Chair Mechatronics - Univ.-Prof. Dr.-Ing. Mark-M. Bakran Profile Fields > Advanced Fields > Advanced Materials Profile Fields > Emerging Fields > Energy Research and Energy Technology Research Institutions > Research Units > ZET - Zentrum für Energietechnik Faculties Faculties > Faculty of Engineering Science Faculties > Faculty of Engineering Science > Chair Mechatronics Profile Fields Profile Fields > Advanced Fields Profile Fields > Emerging Fields Research Institutions Research Institutions > Research Units |
| Result of work at the UBT: | Yes |
| DDC Subjects: | 600 Technology, medicine, applied sciences > 620 Engineering |
| Date Deposited: | 11 Feb 2020 07:51 |
| Last Modified: | 11 Feb 2020 07:51 |
| URI: | https://eref.uni-bayreuth.de/id/eprint/54317 |