at Google ScholarTitle data
Hain, Stefan ; Bakran, Mark-M.:
The Benefit of Using an IGBT with a High Desaturation Current.
2017
Event: EPE 2017 ECCE Europe : 19th European Conference on Power Electronics and Applications
, 11.09.2017 - 14.09.2017
, Warschau, Polen.
(Conference item: Conference
,
Paper
)
Abstract in another language
Increasing the channel width of an IGBT is an obvious way to lower the Vce;sat value without any influences on the switching losses of the device. Consequently, the achievable benefit of IGBTs is limited due to the corresponding increase of the desaturation current, which threaten the short circuit robustness.
This paper presents the benefits of an IGBT which could be realized, if the feature of a low desaturation current is abandoned and the channel width is increased to a maximum.
Further data
| Item Type: | Conference item (Paper) |
|---|---|
| Refereed: | Yes |
| Institutions of the University: | Faculties > Faculty of Engineering Science > Chair Mechatronics > Chair Mechatronics - Univ.-Prof. Dr.-Ing. Mark-M. Bakran Profile Fields > Advanced Fields > Advanced Materials Profile Fields > Emerging Fields > Energy Research and Energy Technology Research Institutions > Research Units > Zentrum für Energietechnik - ZET Faculties Faculties > Faculty of Engineering Science Faculties > Faculty of Engineering Science > Chair Mechatronics Profile Fields Profile Fields > Advanced Fields Profile Fields > Emerging Fields Research Institutions Research Institutions > Research Units |
| Result of work at the UBT: | Yes |
| DDC Subjects: | 600 Technology, medicine, applied sciences > 620 Engineering |
| Date Deposited: | 13 Feb 2020 06:25 |
| Last Modified: | 27 Jun 2024 13:23 |
| URI: | https://eref.uni-bayreuth.de/id/eprint/54334 |