at Google ScholarTitle data
Hofstetter, Patrick ; Maier, Robert ; Bakran, Mark-M.:
Parasitic Turn-On of SiC MOSFETs – Turning a Bug into a Feature.
2020
Event: PCIM Europe 2020
, 7.-8. Juli 2020
, Online.
(Conference item: Conference
,
Paper
)
Official URL: 
Abstract in another language
This paper shows, that the usually unwanted parasitic turn-on (PTO) in SiC MOSFETs does not alwaysneed to be of a disadvantage. It is shown that a small PTO can even be used to lower the maximumovervoltage at the body diode during the diode turn-off. In applications where this is the limiting condition forthe switching speed, this means that the SiC MOSFET turn-on can be accelerated leading to significantlylower losses.
Further data
| Item Type: | Conference item (Paper) |
|---|---|
| Refereed: | No |
| Institutions of the University: | Faculties > Faculty of Engineering Science Faculties > Faculty of Engineering Science > Chair Mechatronics Faculties > Faculty of Engineering Science > Chair Mechatronics > Chair Mechatronics - Univ.-Prof. Dr.-Ing. Mark-M. Bakran Profile Fields > Advanced Fields > Advanced Materials Profile Fields > Emerging Fields > Energy Research and Energy Technology Research Institutions > Affiliated Institutes > TechnologieAllianzOberfranken (TAO) Faculties Profile Fields Profile Fields > Advanced Fields Profile Fields > Emerging Fields Research Institutions Research Institutions > Affiliated Institutes |
| Result of work at the UBT: | Yes |
| DDC Subjects: | 600 Technology, medicine, applied sciences > 620 Engineering |
| Date Deposited: | 03 Sep 2020 07:54 |
| Last Modified: | 07 Sep 2020 09:41 |
| URI: | https://eref.uni-bayreuth.de/id/eprint/56761 |