Penta-Band Inverted-F Antenna Tuned by High-Voltage Switchable RF Capacitors

Titelangaben

Solomko, Valentyn ; Oezdamar, Oguzhan ; Weigel, Robert ; Hagelauer, Amelie:
Penta-Band Inverted-F Antenna Tuned by High-Voltage Switchable RF Capacitors.
In: IEEE Open Journal of Antennas and Propagation. Bd. 2 (2021) . - S. 375-384.
ISSN 2637-6431
DOI: https://doi.org/10.1109/OJAP.2021.3063528

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Abstract

A penta-band inverted-F antenna (IFA) tuned by two high-voltage aperture tuning networks is presented in the paper. The design is based on a singe, non-bended radiating arm IFA. Each of the two aperture tuners comprises a high-voltage switchable RF capacitor IC in parallel with an off-chip inductor. The antenna can be tuned to any of the 5 bands of sub-4 GHz cellular spectrum between 690 MHz and 3800 MHz with return loss exceeding 6 dB at the feed over more that 95% of the total frequency range. A systematic design and analysis of the penta-band IFA based on transmission line model is provided, tuning approach for carrier aggregation enablement over two bands at a time is discussed. A nonlinear performance of the designed antenna with RF capacitors fabricated in bulk-CMOS RF-switch technology is demonstrated.