How to Turn off SiC MOSFET with Low Losses and Low EMI Across the Full Operating Range

Title data

Li, Zheming ; Maier, Robert ; Bakran, Mark-M. ; Domes, Daniel ; Niedernostheide, Franz-J.:
How to Turn off SiC MOSFET with Low Losses and Low EMI Across the Full Operating Range.
2021
Event: PCIM Europe digital days 2021 , 3-7 May 2021 .
(Conference item: Conference , Paper )

Official URL:

Abstract in another language

In this paper, a solution consisting of two approaches is shown to turn-off SiC MOSFET with low losses and low EMI across the full operating range. At first, one approach called “boost-method” is presented. It is confirmed with measurements that with the boost-method low switching losses and low EMI can be realized simultaneously at a certain operating point with its corresponding optimum setting. Then it is verified with mathematical derivation and simulation whether the varying optimum settings caused by varying operating conditions can be realized by using the other approach called “tracking method”. Finally, the performance of this solution in the driving cycle of different applications is evaluated.

Further data

Item Type:	Conference item (Paper)
Refereed:	No
Institutions of the University:	Faculties > Faculty of Engineering Science Faculties > Faculty of Engineering Science > Chair Mechatronics Profile Fields > Advanced Fields > Advanced Materials Profile Fields > Emerging Fields > Energy Research and Energy Technology Research Institutions > Affiliated Institutes > TechnologieAllianzOberfranken (TAO) Faculties Profile Fields Profile Fields > Advanced Fields Profile Fields > Emerging Fields Research Institutions Research Institutions > Affiliated Institutes
Result of work at the UBT:	Yes
DDC Subjects:	600 Technology, medicine, applied sciences > 620 Engineering
Date Deposited:	08 Jul 2021 08:50
Last Modified:	08 Jul 2021 08:50
URI:	https://eref.uni-bayreuth.de/id/eprint/65124