at Google ScholarTitle data
Gleißner, Michael ; Bakran, Mark-M.:
Special Effects of Junction Temperature Measurement based on the Internal Gate Resistance.
2022
Event: PCIM Europe 2022
, 10.05.-12.05.2022
, Nürnberg.
(Conference item: Conference
,
Paper
)
DOI: https://doi.org/10.30420/565822060
Abstract in another language
This paper discusses two problems and possible solutions for measuring the junction temperature of semiconductor switches using the internal gate resistor as temperature sensitive electric parameter. On the one hand, the dependency of the gate impedance on the blocking voltage and the negative gate voltage is analyzed, which can influence the temperature measurement. On the other hand, neighboring switching phases in converter operation can cause faulty temperature measurement values due to EMI coupling in the measuring circuit. An elimination method for both effects is presented.
Further data
| Item Type: | Conference item (Paper) |
|---|---|
| Refereed: | Yes |
| Institutions of the University: | Faculties > Faculty of Engineering Science > Chair Mechatronics > Chair Mechatronics - Univ.-Prof. Dr.-Ing. Mark-M. Bakran Profile Fields > Advanced Fields > Advanced Materials Profile Fields > Emerging Fields > Energy Research and Energy Technology Research Institutions > Research Units > ZET - Zentrum für Energietechnik Faculties Faculties > Faculty of Engineering Science Faculties > Faculty of Engineering Science > Chair Mechatronics Profile Fields Profile Fields > Advanced Fields Profile Fields > Emerging Fields Research Institutions Research Institutions > Research Units |
| Result of work at the UBT: | Yes |
| DDC Subjects: | 600 Technology, medicine, applied sciences > 620 Engineering |
| Date Deposited: | 29 Jul 2022 08:06 |
| Last Modified: | 29 Jul 2022 08:06 |
| URI: | https://eref.uni-bayreuth.de/id/eprint/71262 |