at Google ScholarTitle data
Frank, Michael:
Evaluation of Active Gate Drivers with Switchable Gate Resistors and Intermediate Voltage Levels for SiC MOSFETs in WLTC.
2024
Event: PCIM Europe 2024
, 11.-13.06.2024
, Nürnberg.
(Conference item: Conference
,
Paper
)
DOI: https://doi.org/10.30420/566262092
Abstract in another language
This paper explores the impact of employing an intermediate gate voltage level in an active gate driver
on the performance of a SiC MOSFET inverter during the Worldwide Harmonized Light Vehicles Test
Cycle (WLTC) class 3. It evaluates the effectiveness of this gate driving approach compared to a gate
driving method employing switchable gate resistors. The study includes detailed loss calculations that are
substantiated through experimental verification using an H-bridge in continuous operation mode.
Further data
| Item Type: | Conference item (Paper) |
|---|---|
| Refereed: | Yes |
| Institutions of the University: | Faculties > Faculty of Engineering Science > Chair Mechatronics > Chair Mechatronics - Univ.-Prof. Dr.-Ing. Mark-M. Bakran Profile Fields > Advanced Fields > Advanced Materials Profile Fields > Emerging Fields > Energy Research and Energy Technology Research Institutions > Research Units > Zentrum für Energietechnik - ZET Faculties Faculties > Faculty of Engineering Science Faculties > Faculty of Engineering Science > Chair Mechatronics Profile Fields Profile Fields > Advanced Fields Profile Fields > Emerging Fields Research Institutions Research Institutions > Research Units |
| Result of work at the UBT: | Yes |
| DDC Subjects: | 600 Technology, medicine, applied sciences > 620 Engineering |
| Date Deposited: | 19 Jul 2024 08:43 |
| Last Modified: | 30 Sep 2024 08:14 |
| URI: | https://eref.uni-bayreuth.de/id/eprint/90000 |