at Google ScholarTitle data
Gleißner, Michael ; Bürger, Matthias ; Bakran, Mark-M.:
Junction Temperature Measurement of a 3.3 kV Silicon Carbide MOSFET Power Module.
2024
Event: PCIM Europe 2024
, 11.-13.06.2024
, Nürnberg.
(Conference item: Conference
,
Paper
)
DOI: https://doi.org/10.30420/566262397
Abstract in another language
The static temperature distribution in a 3.3 kV SiC MOSFET power module with several parallel chips
depending on power loss is examined using an infrared temperature camera. Moreover, the dynamic
infrared temperature curves are compared with the junction temperature measurement based on the internal
gate resistance and forward voltage of the body diode as temperature-sensitive electrical parameters.
The thermal impedance measurements with these three different temperature sensors are compared.
Moreover, the influence of different chip temperatures on lifetime simulation is investigated.
Further data
| Item Type: | Conference item (Paper) |
|---|---|
| Refereed: | Yes |
| Institutions of the University: | Faculties > Faculty of Engineering Science > Chair Mechatronics > Chair Mechatronics - Univ.-Prof. Dr.-Ing. Mark-M. Bakran Profile Fields > Advanced Fields > Advanced Materials Profile Fields > Emerging Fields > Energy Research and Energy Technology Research Institutions > Research Units > Zentrum für Energietechnik - ZET |
| Result of work at the UBT: | Yes |
| DDC Subjects: | 600 Technology, medicine, applied sciences > 620 Engineering |
| Date Deposited: | 19 Jul 2024 08:50 |
| Last Modified: | 19 Jul 2024 08:50 |
| URI: | https://eref.uni-bayreuth.de/id/eprint/90001 |