bei Google ScholarTitelangaben
Ringelmann, Tim ; Bakran, Mark-M.:
Characterizing the Switching Behavior of a 1.2 kV mixed SiC JFET and MOSFET Half Bridge.
2024
Veranstaltung: PCIM Europe 2024
, 11.-13.06.2024
, Nürnberg.
(Veranstaltungsbeitrag: Kongress/Konferenz/Symposium/Tagung
,
Paper
)
Abstract
For cost savings and loss reduction in automotive inverters, SiC JFETs are promising devices compared
to SiC MOSFETs. For this reason, the switching behavior of JFETs and MOSFETs is investigated
and compared with each other. The normally-on behavior of the JFET, which is a disadvantage
due to a phase short-circuit while the gate driver supply voltage fails, can be turned into an advantage
by mixing each half bridge of a B6 inverter with a normally-off semiconductor. The mixed half bridge
configuration allows an active short-circuit case in an automotive inverter, by itself. For this reason, the
switching behavior and switching effects in a mixed JFET/MOSFET half bridge are investigated and
compared with the uniform half bridges. To complete the switching characterization, a performance
calculation is performed using a B6 inverter.
Weitere Angaben
| Publikationsform: | Veranstaltungsbeitrag (Paper) |
|---|---|
| Begutachteter Beitrag: | Ja |
| Institutionen der Universität: | Fakultäten > Fakultät für Ingenieurwissenschaften > Lehrstuhl Mechatronik > Lehrstuhl Mechatronik - Univ.-Prof. Dr.-Ing. Mark-M. Bakran Profilfelder > Advanced Fields > Neue Materialien Profilfelder > Emerging Fields > Energieforschung und Energietechnologie Forschungseinrichtungen > Forschungsstellen > Zentrum für Energietechnik - ZET |
| Titel an der UBT entstanden: | Ja |
| Themengebiete aus DDC: | 600 Technik, Medizin, angewandte Wissenschaften > 620 Ingenieurwissenschaften |
| Eingestellt am: | 13 Sep 2024 07:58 |
| Letzte Änderung: | 13 Sep 2024 07:58 |
| URI: | https://eref.uni-bayreuth.de/id/eprint/90400 |