at Google ScholarTitle data
Ringelmann, Tim ; Bakran, Mark-M.:
Characterizing the Switching Behavior of a 1.2 kV mixed SiC JFET and MOSFET Half Bridge.
2024
Event: PCIM Europe 2024
, 11.-13.06.2024
, Nürnberg.
(Conference item: Conference
,
Paper
)
Abstract in another language
For cost savings and loss reduction in automotive inverters, SiC JFETs are promising devices compared
to SiC MOSFETs. For this reason, the switching behavior of JFETs and MOSFETs is investigated
and compared with each other. The normally-on behavior of the JFET, which is a disadvantage
due to a phase short-circuit while the gate driver supply voltage fails, can be turned into an advantage
by mixing each half bridge of a B6 inverter with a normally-off semiconductor. The mixed half bridge
configuration allows an active short-circuit case in an automotive inverter, by itself. For this reason, the
switching behavior and switching effects in a mixed JFET/MOSFET half bridge are investigated and
compared with the uniform half bridges. To complete the switching characterization, a performance
calculation is performed using a B6 inverter.
Further data
| Item Type: | Conference item (Paper) |
|---|---|
| Refereed: | Yes |
| Institutions of the University: | Faculties > Faculty of Engineering Science > Chair Mechatronics > Chair Mechatronics - Univ.-Prof. Dr.-Ing. Mark-M. Bakran Profile Fields > Advanced Fields > Advanced Materials Profile Fields > Emerging Fields > Energy Research and Energy Technology Research Institutions > Research Units > Zentrum für Energietechnik - ZET |
| Result of work at the UBT: | Yes |
| DDC Subjects: | 600 Technology, medicine, applied sciences > 620 Engineering |
| Date Deposited: | 13 Sep 2024 07:58 |
| Last Modified: | 13 Sep 2024 07:58 |
| URI: | https://eref.uni-bayreuth.de/id/eprint/90400 |