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Frank, Michael ; Bakran, Mark-M.:
A Comparison of Gate Resistance and Gate Voltage Manipulation Active Gate Drivers for Silicon Carbide MOSFETs.
2024
Veranstaltung: ECCE Europe 2024
, 02.09.-06.09.2024
, Darmstadt.
(Veranstaltungsbeitrag: Kongress/Konferenz/Symposium/Tagung
,
Paper
)
DOI: https://doi.org/10.1109/ECCEEurope62508.2024.10751834
Abstract
Numerous studies in power electronics literature have focused on gate resistance manipulation (GRM) and gate voltage manipulation (GVM) Active Gate Drivers (AGD) for Silicon Carbide (SiC) MOSFETs. Despite this, there has been a lack of direct, conceptual comparisons between these two methodologies. This paper presents a comprehensive comparison of GRMAGD and GVMAGD with pulse-to-pulse adaptation.
Analysis, conducted under equivalent conditions in double pulse measurements, reveals that while both methods exhibit similar switching performance in active turn-on scenarios, GRMAGDs demonstrate superior switching efficiency during active turn-off switching. It is additionally observed that GVMAGDs, using a specific gate driving voltage pattern, are more sensitive to variations in threshold voltage. Considering these factors, along with their lower complexity and cost, GRMAGDs emerge as the more favorable option over GVMAGDs in applications with widely varying load.
Weitere Angaben
| Publikationsform: | Veranstaltungsbeitrag (Paper) |
|---|---|
| Begutachteter Beitrag: | Ja |
| Keywords: | Index Terms—Active Gate Driver; SiC MOSFET; Power Converters for EV; Driver concepts; Switching losses; Control strategy |
| Institutionen der Universität: | Fakultäten > Fakultät für Ingenieurwissenschaften > Lehrstuhl Mechatronik > Lehrstuhl Mechatronik - Univ.-Prof. Dr.-Ing. Mark-M. Bakran Profilfelder > Advanced Fields > Neue Materialien Profilfelder > Emerging Fields > Energieforschung und Energietechnologie Forschungseinrichtungen > Forschungsstellen > Zentrum für Energietechnik - ZET |
| Titel an der UBT entstanden: | Ja |
| Themengebiete aus DDC: | 600 Technik, Medizin, angewandte Wissenschaften > 620 Ingenieurwissenschaften |
| Eingestellt am: | 22 Nov 2024 06:17 |
| Letzte Änderung: | 22 Nov 2024 06:17 |
| URI: | https://eref.uni-bayreuth.de/id/eprint/91225 |