at Google ScholarTitle data
Frank, Michael ; Bakran, Mark-M.:
A Comparison of Gate Resistance and Gate Voltage Manipulation Active Gate Drivers for Silicon Carbide MOSFETs.
2024
Event: ECCE Europe 2024
, 02.09.-06.09.2024
, Darmstadt.
(Conference item: Conference
,
Paper
)
DOI: https://doi.org/10.1109/ECCEEurope62508.2024.10751834
Abstract in another language
Numerous studies in power electronics literature have focused on gate resistance manipulation (GRM) and gate voltage manipulation (GVM) Active Gate Drivers (AGD) for Silicon Carbide (SiC) MOSFETs. Despite this, there has been a lack of direct, conceptual comparisons between these two methodologies. This paper presents a comprehensive comparison of GRMAGD and GVMAGD with pulse-to-pulse adaptation.
Analysis, conducted under equivalent conditions in double pulse measurements, reveals that while both methods exhibit similar switching performance in active turn-on scenarios, GRMAGDs demonstrate superior switching efficiency during active turn-off switching. It is additionally observed that GVMAGDs, using a specific gate driving voltage pattern, are more sensitive to variations in threshold voltage. Considering these factors, along with their lower complexity and cost, GRMAGDs emerge as the more favorable option over GVMAGDs in applications with widely varying load.
Further data
| Item Type: | Conference item (Paper) |
|---|---|
| Refereed: | Yes |
| Keywords: | Index Terms—Active Gate Driver; SiC MOSFET; Power Converters for EV; Driver concepts; Switching losses; Control strategy |
| Institutions of the University: | Faculties > Faculty of Engineering Science > Chair Mechatronics > Chair Mechatronics - Univ.-Prof. Dr.-Ing. Mark-M. Bakran Profile Fields > Advanced Fields > Advanced Materials Profile Fields > Emerging Fields > Energy Research and Energy Technology Research Institutions > Research Units > Zentrum für Energietechnik - ZET |
| Result of work at the UBT: | Yes |
| DDC Subjects: | 600 Technology, medicine, applied sciences > 620 Engineering |
| Date Deposited: | 22 Nov 2024 06:17 |
| Last Modified: | 22 Nov 2024 06:17 |
| URI: | https://eref.uni-bayreuth.de/id/eprint/91225 |