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Nehmer, Dominik ; Ringelmann, Tim ; Bakran, Mark-M.:
Modelling and Evalaution of the Bidirectional Surge Current Robustness of Si(-IGBT and -Diode), SiC(-MOSFETs and -JFET) and GaN(-HEMTs) Devices.
In: Energies.
Bd. 17
(2024)
Heft 17
.
- 4362.
ISSN 1996-1073
DOI: https://doi.org/10.3390/en17174362
Abstract
This paper will evaluate the surge current robustness of different devices in relation to the active short circuit (ASC). For the purposes of this study, a Si IGBT and its diode, two SiC MOSFETs with different voltage ratings, a SiC JFET, and three GaN HEMTs will be compared. For the GaN devices, a eMode, a dMode, and a cascode device are employed. With the exception of the Si diode, all devices exhibited a current saturation effect. This saturation will result in significant losses and, ultimately, a thermal defect. For all devices, a safe operating area (SOA) criterion is established. For the SiC and GaN devices, the saturation voltage can be employed to define the safe operating area (SOA) criterion. In this context, two on-state resistance models will be defined for these devices. One is solely temperature-dependent, while the other also considers current saturation. Consequently, the saturation voltage and the on-resistance model represent a straightforward methodology for evaluating the ASC robustness of the devices. For all devices, a recommendation for a loss model and SOA criterion will be provided. Finally, the surge current robustness of all devices is compared. The Si, SiC and GaN devices exhibit comparable high surge current robustness in the application, with the exception of the GaN eMode, which is susceptible to strong current saturation.
Weitere Angaben
| Publikationsform: | Artikel in einer Zeitschrift |
|---|---|
| Begutachteter Beitrag: | Ja |
| Keywords: | surge current; active short circuit; wide-band gap; electrical vehicle; drive inverter; GaN HEMT; SiC MOSFET; SiC JFET; Si IGBT; Si diode |
| Institutionen der Universität: | Fakultäten > Fakultät für Ingenieurwissenschaften > Lehrstuhl Mechatronik > Lehrstuhl Mechatronik - Univ.-Prof. Dr.-Ing. Mark-M. Bakran Profilfelder > Advanced Fields > Neue Materialien Profilfelder > Emerging Fields > Energieforschung und Energietechnologie Forschungseinrichtungen > Forschungsstellen > Zentrum für Energietechnik - ZET |
| Titel an der UBT entstanden: | Ja |
| Themengebiete aus DDC: | 600 Technik, Medizin, angewandte Wissenschaften > 620 Ingenieurwissenschaften |
| Eingestellt am: | 12 Dec 2024 09:07 |
| Letzte Änderung: | 12 Dec 2024 09:07 |
| URI: | https://eref.uni-bayreuth.de/id/eprint/91382 |