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Thermal Impedance Spectroscopy by Varying the Gate Voltage during Inverter Operation

Title data

Gleißner, Michael ; Bakran, Mark-M.:
Thermal Impedance Spectroscopy by Varying the Gate Voltage during Inverter Operation.
2025
Event: PCIM Conference 2025 , 06.05.-08.05.2025 , Nürnberg.
(Conference item: Conference , Paper )
DOI: https://doi.org/10.30420/566541034

Abstract in another language

A low-frequency sinusoidal superposition on the positive gate voltage in the on-state of power semiconductors
causes a temperature fluctuation which can be measured by the internal gate resistance based
junction temperature monitor during inverter operation. This paper describes the necessary components
of the circuit and presents measurement results. This measuring principle allows the detection of thermal
impedance changes during inverter operation without the need for special load profiles.

Further data

Item Type: Conference item (Paper)
Refereed: Yes
Institutions of the University: Faculties > Faculty of Engineering Science > Chair Mechatronics > Chair Mechatronics - Univ.-Prof. Dr.-Ing. Mark-M. Bakran
Profile Fields > Advanced Fields > Advanced Materials
Profile Fields > Emerging Fields > Energy Research and Energy Technology
Research Institutions > Research Units > Zentrum für Energietechnik - ZET
Result of work at the UBT: Yes
DDC Subjects: 600 Technology, medicine, applied sciences > 620 Engineering
Date Deposited: 17 Jul 2025 06:43
Last Modified: 17 Jul 2025 06:43
URI: https://eref.uni-bayreuth.de/id/eprint/94208