at Google ScholarTitle data
Ringelmann, Tim ; Bäumler, Andreas ; Bakran, Mark-M.:
Surge Current Robustness of 1.2 kV SiC JFETs for Active Short Circuit Events in Automotive Applications.
2025
Event: PCIM Conference 2025
, 06.05.-08.05.2025
, Nürnberg.
(Conference item: Conference
,
Paper
)
DOI: https://doi.org/10.30420/566541043
Abstract in another language
A mixed 1.2 kV SiC JFET/MOSFET half bridge (HB) represents a novel approach in comparison to a
uniform 1.2 kV SiC MOSFET HB. In automotive inverters in an event of a control failure, a safe state
must be initiated, which is referred to as active short circuit (ASC). With the normally-on JFET the mixed
JFET/MOSFET HB is capable of initiating this safe state at a gate supply voltage outage by itself. To
estimate the robustness in case of ASC events usually surge current measurements are done. Therefore,
this paper deals with the surge current robustness of SiC JFETs in comparison to state of the art SiC
MOSFETs. Bidirectional, half-sinusoidal surge current tests under different pulse length and starting case
temperatures are performed. The worst case conduction direction is determined, a failure analysis is done
and a safe operating area is defined. Finally a evaluation of the surge current robustness relative to an
automotive nominal inverter current is discussed.
Further data
| Item Type: | Conference item (Paper) |
|---|---|
| Refereed: | Yes |
| Institutions of the University: | Faculties > Faculty of Engineering Science > Chair Mechatronics > Chair Mechatronics - Univ.-Prof. Dr.-Ing. Mark-M. Bakran Profile Fields > Advanced Fields > Advanced Materials Profile Fields > Emerging Fields > Energy Research and Energy Technology Research Institutions > Research Units > Zentrum für Energietechnik - ZET |
| Result of work at the UBT: | Yes |
| DDC Subjects: | 600 Technology, medicine, applied sciences > 620 Engineering |
| Date Deposited: | 17 Jul 2025 07:00 |
| Last Modified: | 17 Jul 2025 07:00 |
| URI: | https://eref.uni-bayreuth.de/id/eprint/94211 |