Titelangaben
Sasindran, Ramkiran ; Scholz, Till ; Moos, Ralf ; Köhler, Anna:
Spectroscopic Investigation of Defects in Doped MAPbI₃ Prepared Using Mechanochemical Synthesis.
2026
Veranstaltung: 9th International Conference on Perovskite Solar Cells and Optoelectronics - PSCO 2026
, 23.9.-25.9.2026
, Lausanne, Switzerland.
(Veranstaltungsbeitrag: Kongress/Konferenz/Symposium/Tagung
,
Poster
)
Angaben zu Projekten
| Projekttitel: |
Offizieller Projekttitel Projekt-ID Verständnis und Kontrolle über Defekte in Halogenidperowskiten durch defektchemische Untersuchungen in Verbindung mit optischen In-situ-Charakterisierungen und detaillierter optischer Spektroskopie 324052211 |
|---|---|
| Projektfinanzierung: |
Deutsche Forschungsgemeinschaft |
Abstract
Although lead halide perovskites exhibit exceptional optoelectronic properties, defects continue to limit their performance and long-term stability. Understanding how these defects modify the electronic structure and charge-carrier recombination is therefore a key step toward optimizing perovskite-based devices.In this work, Cu is introduced as a dopant at various concentrations during the mechanochemical synthesis of MAPbI3 powder. The doped powder is subsequently dissolved in suitable solvents and processed from solution via spin-coating, into thin layers with thicknesses of several hundred nanometers. Film morphology and thickness are characterized using scanning electron microscopy (SEM). Electrical conductivity measurements are carried out under controlled iodine partial pressure using an inbuilt experimental setup[1] (Figure 1). Since the density of mobile charge carriers is governed by the concentration of ionized point defects, the defect density can be extracted from conductivity measurements as a function of iodine partial pressure within a defect-chemical framework. Furthermore, spectroscopic investigations using steady-state and transient photoluminescence (PL) and absorption measurements are carried out to investigate the effect of Cu-induced defects on the optoelectronic properties of Cu-doped MAPbI3.
Weitere Angaben
| Publikationsform: | Veranstaltungsbeitrag (Poster) |
|---|---|
| Begutachteter Beitrag: | Ja |
| Institutionen der Universität: | Fakultäten > Fakultät für Mathematik, Physik und Informatik > Physikalisches Institut > Lehrstuhl Experimentalphysik II - Optoelektronik weicher Materie > Lehrstuhl Experimentalphysik II - Optoelektronik weicher Materie - Univ.-Prof. Dr. Anna Köhler Fakultäten > Fakultät für Ingenieurwissenschaften Fakultäten > Fakultät für Ingenieurwissenschaften > Lehrstuhl Funktionsmaterialien > Lehrstuhl Funktionsmaterialien - Univ.-Prof. Dr.-Ing. Ralf Moos Profilfelder > Advanced Fields > Neue Materialien Forschungseinrichtungen > Zentrale wissenschaftliche Einrichtungen > Bayreuther Materialzentrum - BayMAT |
| Titel an der UBT entstanden: | Ja |
| Themengebiete aus DDC: | 600 Technik, Medizin, angewandte Wissenschaften > 620 Ingenieurwissenschaften |
| Eingestellt am: | 08 Okt 2026 07:25 |
| Letzte Änderung: | 08 Okt 2026 07:49 |
| URI: | https://eref.uni-bayreuth.de/id/eprint/99648 |

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