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Measurement and modeling of the high-current resistance behavior of vias in thick-film technology

Title data

Ortolino, Dominique ; Kita, Jaroslaw ; Wurm, Roland ; Blum, Emmanuel ; Beart, Karin ; Moos, Ralf:
Measurement and modeling of the high-current resistance behavior of vias in thick-film technology.
2010
Event: 34th International Microelectronics and Packaging IMAPS Conference , 22.-25.09.2010 , Wrocław, Poland.
(Conference item: Conference , Other Presentation type)

Abstract in another language

The number of built-in control units in automobiles is continuously increasing. Especially in rough environments, thick-film technology is used, combining cost-effective production and robustness. The hybrid thick-film circuits consist of several components like the screen-printed elements (conductors, resistors, electrical vias (electrical connection between both sides of the substrate)), SMDs and active elements like ICs. Increasing integration density and new applications, require higher currents. It is indispensable to know the limits of the different parts of the circuit, as the failure of a circuit board would result in a total breakdown of the vehicle. Most of them are well investigated, but not the electrical vias, especially their stability against high currents. In this contribution, the high-current behavior of thick-film vias is investigated and modeled. A current (especially a high one) within a via causes resistive heating, that might damage the via itself. While the amount of electric energy transformed into thermal energy depends on the thermoelectric properties of the via metallization, the resulting temperatures in the metallization layer are influenced by the caloric properties, the heat capacity and the heat conductivity, respectively. A FEM model has been developed to simulate the phenomena occurring during short time high current pulses. The parameters for material properties were either taken from literature data or determined by measurements. The output of the model is a temperature distribution as well as the electrical voltage drop as a result of applied constant current pulses. Validation of the model was conducted by evaluating the time-dependent voltage drop within the via during an impression of a constant current. The measurements have been arranged in 4-wire-technique. Simulation and measurement show a good agreement.

Further data

Item Type: Conference item (Other)
Refereed: Yes
Institutions of the University: Faculties > Faculty of Engineering Science
Faculties > Faculty of Engineering Science > Chair Functional Materials > Chair Functional Materials - Univ.-Prof. Dr.-Ing. Ralf Moos
Faculties
Faculties > Faculty of Engineering Science > Chair Functional Materials
Profile Fields > Advanced Fields > Advanced Materials
Research Institutions > Research Centres > Bayreuth Center for Material Science and Engineering - BayMAT
Profile Fields
Profile Fields > Advanced Fields
Research Institutions
Research Institutions > Research Centres
Result of work at the UBT: Yes
DDC Subjects: 600 Technology, medicine, applied sciences > 620 Engineering
Date Deposited: 26 May 2015 11:42
Last Modified: 12 Apr 2016 06:53
URI: https://eref.uni-bayreuth.de/id/eprint/14220