bei Google ScholarTitelangaben
Ortolino, Dominique ; Kita, Jaroslaw ; Wurm, Roland ; Blum, Emmanuel ; Beart, Karin ; Moos, Ralf:
Measurement and modeling of the high-current resistance behavior of vias in thick-film technology.
2010
Veranstaltung: 34th International Microelectronics and Packaging IMAPS Conference
, 22.-25.09.2010
, Wrocław, Poland.
(Veranstaltungsbeitrag: Kongress/Konferenz/Symposium/Tagung
,
Sonstige
Präsentationstyp)
Abstract
The number of built-in control units in automobiles is continuously increasing. Especially in rough environments, thick-film technology is used, combining cost-effective production and robustness. The hybrid thick-film circuits consist of several components like the screen-printed elements (conductors, resistors, electrical vias (electrical connection between both sides of the substrate)), SMDs and active elements like ICs. Increasing integration density and new applications, require higher currents. It is indispensable to know the limits of the different parts of the circuit, as the failure of a circuit board would result in a total breakdown of the vehicle. Most of them are well investigated, but not the electrical vias, especially their stability against high currents. In this contribution, the high-current behavior of thick-film vias is investigated and modeled. A current (especially a high one) within a via causes resistive heating, that might damage the via itself. While the amount of electric energy transformed into thermal energy depends on the thermoelectric properties of the via metallization, the resulting temperatures in the metallization layer are influenced by the caloric properties, the heat capacity and the heat conductivity, respectively. A FEM model has been developed to simulate the phenomena occurring during short time high current pulses. The parameters for material properties were either taken from literature data or determined by measurements. The output of the model is a temperature distribution as well as the electrical voltage drop as a result of applied constant current pulses. Validation of the model was conducted by evaluating the time-dependent voltage drop within the via during an impression of a constant current. The measurements have been arranged in 4-wire-technique. Simulation and measurement show a good agreement.
Weitere Angaben
| Publikationsform: | Veranstaltungsbeitrag (Sonstige) |
|---|---|
| Begutachteter Beitrag: | Ja |
| Institutionen der Universität: | Fakultäten > Fakultät für Ingenieurwissenschaften Fakultäten > Fakultät für Ingenieurwissenschaften > Lehrstuhl Funktionsmaterialien > Lehrstuhl Funktionsmaterialien - Univ.-Prof. Dr.-Ing. Ralf Moos Fakultäten Fakultäten > Fakultät für Ingenieurwissenschaften > Lehrstuhl Funktionsmaterialien Profilfelder > Advanced Fields > Neue Materialien Forschungseinrichtungen > Forschungszentren > Bayreuther Materialzentrum - BayMAT Profilfelder Profilfelder > Advanced Fields Forschungseinrichtungen Forschungseinrichtungen > Forschungszentren |
| Titel an der UBT entstanden: | Ja |
| Themengebiete aus DDC: | 600 Technik, Medizin, angewandte Wissenschaften > 620 Ingenieurwissenschaften |
| Eingestellt am: | 26 Mai 2015 11:42 |
| Letzte Änderung: | 12 Apr 2016 06:53 |
| URI: | https://eref.uni-bayreuth.de/id/eprint/14220 |