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Modeling the Failure Mechanism of Electrical Vias Manufactured in Thick-Film Technology

Titelangaben

Ortolino, Dominique ; Kita, Jaroslaw ; Moos, Ralf ; Wurm, Roland ; Pletsch, Andreas ; Beart, Karin:
Modeling the Failure Mechanism of Electrical Vias Manufactured in Thick-Film Technology.
2013
Veranstaltung: IMAPS/ACerS 9th International Conference and Exhibition on Ceramic Interconnect and Ceramic Microsystems Technologies (CICMT 2013) , 23.-25.04.2013 , Orlando, Florida, USA.
(Veranstaltungsbeitrag: Kongress/Konferenz/Symposium/Tagung , Paper )
DOI: https://doi.org/10.4071/CICMT-2013-WP23

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Projekttitel:
Offizieller Projekttitel
Projekt-ID
Ohne Angabe
AZ-770-07

Projektfinanzierung: BAyerische Forschungsstiftung

Abstract

Hybrid-thick-film circuits consist of many different components, like screen-printed passive elements (conductors, resistors, and electrical vias), SMDs, and active elements like transistors or ICs. Whereas most of passive components are well investigated and described, the electrical vias often remain unattended. Resistive heating caused by high current pulses might lead to the destruction of the vias. In previous work, we set up a 3d FEM model and investigated the influence of non-radial-symmetric contacting and geometric irregularities of the vias on the occurring maximum temperatures.The present contribution deals with the modeling of a failure mechanism of an electrical via caused by high current pulses. When the local temperature exceeds a defined melting temperature, the metallization layer melts and is not available for conduction any more. The current density rises as a consequence of the decreased cross section area of the vias and leads to a higher heat production in a smaller area. This conducts further melting of the metallization layer and results in a positive feedback that accelerates the destruction of the via. The approach of this contribution is to model the described failure mechanism in a 2d-radial-symmetric FEM model. The modeling results were validated using high current measurements of electrical vias. Modeling and measurement of the voltage drop during a constant current pulse agree very well, from very low current density pulses up to pulses that lead to the destruction of the vias.

Weitere Angaben

Publikationsform: Veranstaltungsbeitrag (Paper)
Begutachteter Beitrag: Ja
Institutionen der Universität: Fakultäten > Fakultät für Ingenieurwissenschaften
Fakultäten > Fakultät für Ingenieurwissenschaften > Lehrstuhl Funktionsmaterialien
Fakultäten > Fakultät für Ingenieurwissenschaften > Lehrstuhl Funktionsmaterialien > Lehrstuhl Funktionsmaterialien - Univ.-Prof. Dr.-Ing. Ralf Moos
Profilfelder > Advanced Fields > Neue Materialien
Forschungseinrichtungen > Forschungszentren > Bayreuther Materialzentrum - BayMAT
Fakultäten
Profilfelder
Profilfelder > Advanced Fields
Forschungseinrichtungen
Forschungseinrichtungen > Forschungszentren
Titel an der UBT entstanden: Ja
Themengebiete aus DDC: 600 Technik, Medizin, angewandte Wissenschaften > 620 Ingenieurwissenschaften
Eingestellt am: 18 Mai 2015 07:22
Letzte Änderung: 14 Apr 2016 07:19
URI: https://eref.uni-bayreuth.de/id/eprint/13589