bei Google ScholarTitelangaben
Werner, Robin ; Kita, Jaroslaw ; Gollner, Michael ; Linseis, Florian ; Moos, Ralf:
Current State on the Development of a New Low Cost Measurement System for Conductivity, Hall Constant and Seebeck Coefficient at Temperatures up to 800 °C.
2019
Veranstaltung: 38th International Conference on Thermoelectrics
, June 30 - July 4, 2019
, Gyeongju, Korea.
(Veranstaltungsbeitrag: Kongress/Konferenz/Symposium/Tagung
,
Poster
)
Abstract
The determination of electrical transport properties like the electrical conductivity, the charge carrier density, the charge carrier mobility, and the Seebeck coefficient is of increasing importance in material characterization for high temperature applications. Currently, various measurement devices are required for this, whereby electrical, thermal or geometric errors can occur. We report on the current state of the development of a new system that combines the measurement of the electrical conductivity, the Hall constant and the Seebeck coefficient in a temperature range from -150 °C up to 800 °C in different gas atmospheres. All measurements are carried out on a single sample without changing the holder, which ensures the comparability of the measured values due to the identical measurement conditions. The new system consists of a gas floated measurement chamber and two permanent magnet yoke systems with a magnetic flux density of +/- 760 mT. The magnets are mounted on a moveable sled to change the polarity of the magnetic field within the fixed measurement chamber. The novel sample holder, shown in Figure 1, is based on a 635 μm thick alumina substrate and can be easily mounted in the measurement chamber by using a card edge connection. The sample of any geometry between 5 and 12.7 mm diameter can be easily contacted by four moveable electrodes on the front side allowing Hall and resistivity measurements according to van der Pauw’s method. A screen-printed platinum structure was placed on the reverse side for Joule’s heating. The new holder was designed by FEM analysis and validated with thermal imaging to guarantee a homogenous temperature distribution within the sample. First measurements of the electrical conductivity and the charge carrier density of a boron-doped silicon wafer and a gold thin-film up to 500 °C are shown in Figure 2. The calculated band gap of 1.1 eV from the slope of the intrinsic conductivity of silicon is a validation for the functionality of the measurement system. The increase of the charge carrier density for silicon within the region of the intrinsic conduction and the constant carrier density for gold are validating the measurement system as well. For future measurements the temperature will be increased. Also thermocouples and a second screen-printed heater for an additional temperature gradient for Seebeck measurements will be added.
Weitere Angaben
| Publikationsform: | Veranstaltungsbeitrag (Poster) |
|---|---|
| Begutachteter Beitrag: | Ja |
| Institutionen der Universität: | Fakultäten > Fakultät für Ingenieurwissenschaften Fakultäten > Fakultät für Ingenieurwissenschaften > Lehrstuhl Funktionsmaterialien > Lehrstuhl Funktionsmaterialien - Univ.-Prof. Dr.-Ing. Ralf Moos Profilfelder > Advanced Fields > Neue Materialien Forschungseinrichtungen > Zentrale wissenschaftliche Einrichtungen > Bayreuther Materialzentrum - BayMAT Fakultäten Fakultäten > Fakultät für Ingenieurwissenschaften > Lehrstuhl Funktionsmaterialien Profilfelder Profilfelder > Advanced Fields Forschungseinrichtungen Forschungseinrichtungen > Zentrale wissenschaftliche Einrichtungen |
| Titel an der UBT entstanden: | Ja |
| Themengebiete aus DDC: | 600 Technik, Medizin, angewandte Wissenschaften > 620 Ingenieurwissenschaften |
| Eingestellt am: | 18 Jul 2019 08:20 |
| Letzte Änderung: | 08 Aug 2024 08:11 |
| URI: | https://eref.uni-bayreuth.de/id/eprint/51529 |